Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes

✍ Scribed by Yun-Wei Cheng; Hung-Hsien Chen; Min-Yung Ke; Cheng-Pin Chen; Jian Jang Huang

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 344 KB
• Volume: 282
• Category: Article
• ISSN: 0030-4018
• DOI: 10.1016/j.optcom.2008.11.026

✦ Synopsis

A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the ptype GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the linearity of the luminescence-current curve of the device is improved without altering electrical properties.