## Abstract ZnO/GaN pβiβn heterojunctions light emitting diodes were fabricated by plasmaβassisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate nβZnO/iβZnO/pβGaN heterojunction light emitting diode. The emission of iβZnO was obtained due to the limitati
Selective Angle Electroluminescence of Light-Emitting Diodes based on Nanostructured ZnO/GaN Heterojunctions
β Scribed by Hang-Kuei Fu; Cheng-Liang Cheng; Chun-Hsiung Wang; Tai-Yuan Lin; Yang-Fang Chen
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 574 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1616-301X
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