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Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate

✍ Scribed by Nishida, T. ;Kobayashi, N.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 503 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200111)188:1<113::aid-pssa113>3.0.co;2-c

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✦ Synopsis

Ten-milliwatt output at 352 nm wavelength is obtained in the room-temperature cw operation of an AlGaN-based ultraviolet light emitting diode. The maximum internal quantum efficiency is estimated to be more than 80%. We also demonstrate the excitation of fluorescence of three basal colors by this wavelength.

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