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Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

โœ Scribed by C. Q. Chen; V. Adivarahan; M. Shatalov; M. E. Gaevski; E. Kuokstis; J. W. Yang; H. P. Maruska; Z. Gong; M. Asif Khan; R. Liu; A. Bell; F. A. Ponce


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
235 KB
Volume
2
Category
Article
ISSN
1862-6351

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โœ Nishida, T. ;Kobayashi, N. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 503 KB

Ten-milliwatt output at 352 nm wavelength is obtained in the room-temperature cw operation of an AlGaN-based ultraviolet light emitting diode. The maximum internal quantum efficiency is estimated to be more than 80%. We also demonstrate the excitation of fluorescence of three basal colors by this wa