𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

✍ Scribed by Wonseok Lee; Jae Limb; Jae-Hyun Ryou; Dongwon Yoo; Theodore Chung; Russell D. Dupuis


Book ID
107453614
Publisher
Springer US
Year
2006
Tongue
English
Weight
167 KB
Volume
35
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effect of selective ion-implanted p-GaN
✍ Yun-Wei Cheng; Hung-Hsien Chen; Min-Yung Ke; Cheng-Pin Chen; Jian Jang Huang πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 344 KB

A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the ptype GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the line