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The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

✍ Scribed by R. Potter; S. Mazzucato; N. Balkan; M.J. Adams; P.R. Chalker; T.B. Joyce; T.J. Bullough

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
416 KB
Volume
29
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga x In 1-x As 1-y N y /GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 µm can be obtained for a wide range of In and/or N concentrations. However, in most Fabry-Perot lasers and vertical cavity surface emitting lasers (VCSELs) reported in the literature, the threshold current density plotted as a function of the relative In/N composition (R = (1 -x)/y) indicate a broad minima for 40 < R < 70, suggesting an optimum relative composition. We also present the results of our studies concerning the optical quality of Ga x In 1-x As 1-y N y /GaAs single quantum wells for R = 15. We show that the optical quality of GaInAsN can be improved while achieving a red shift in the PL spectra. This is unlike the results obtained by rapid thermal annealing or conventional annealing, which are widely employed as post-growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue shift.

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