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The effect of compositional disorder on electronic band structure in GaxIn1 − xAsySb1 − yalloys lattice matched to GaSb

✍ Scribed by N. Bouarissa

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
177 KB
Volume
26
Category
Article
ISSN
0749-6036

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✦ Synopsis

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga x In 1-x As y Sb 1-y quarternary alloys lattice matched to GaSb. The effects of compositional variations are properly included in the calculations.

Our theoretical results show that the compositional disorder plays an important role in the determination of the energy band structure of Ga x In 1-x As y Sb 1-y /GaSb and that the bowing parameter is dominated by the group V-anion-based sublattice. Moreover, the absorption at the fundamental optical gaps is found to be direct within a whole range of the x composition.

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