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Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/Al xGa1 − x As quantum well-wires

✍ Scribed by Ş. Aktaş; S.E. Okan; H. Akbaş

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
211 KB
Volume
30
Category
Article
ISSN
0749-6036

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✦ Synopsis

The ground state binding energy of a hydrogenic impurity in a coaxial cylindirical quantum well wire system subjected to an external electric field applied perpendicular to the symmetry axis of the wire system is studied within a variational scheme. Binding energy calculations were performed as functions of the inner barrier thickness and the electric field for two different impurity positions. The main result is that a sharp decrease in the binding energy, which may be important in device applications, occurs in certain conditions.

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