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Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1 − xAs nanostructure in the presence of a static electric field

✍ Scribed by Q. Fanyao; A.L.A. Fonseca; O.A.C. Nunes

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
173 KB
Volume
23
Category
Article
ISSN
0749-6036

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