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The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga0.8As doped-channel FET's

✍ Scribed by Shey-Shi Lu; Chin-Chun Meng; Yo-Sheng Lin; Hai Lan

Book ID: 114537516
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 249 KB
Volume: 46
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.737440

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