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Device linearity improvement of In 0.49 Ga 0.51 P/In 0.15 Ga 0.85 As doped-channel FETs with a metal plug alloy process

✍ Scribed by Chien, Feng-Tso; Liao, Chien-Nan; Yin, Jin-Mu; Chiu, Hsien-Chin; Tsai, Yao-Tsung

Book ID: 127250216
Publisher: Institute of Physics
Year: 2008
Tongue: English
Weight: 393 KB
Volume: 23
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/3/035009

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