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On the non-ideal characteristics of Schottky-Barrier-gate diodes in In0.52Al0.48As/In0.53Ga0.47 As heterostructure FET's on InP substrates

✍ Scribed by Sung, R.; Das, M.B.

Book ID
114535996
Publisher
IEEE
Year
1995
Tongue
English
Weight
338 KB
Volume
42
Category
Article
ISSN
0018-9383

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Gate control of spin–orbit interaction i
Gate control of spin–orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure
✍ Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Takatomo Enoki πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 124 KB

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to t