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High temperature performance of Ga0.51In0.49PIn0.2Ga0.8As pseudomorphic HEMTs with WSix gates

โœ Scribed by Yi-Jen Chan; Tzu-Jin Yeh; Jenn-Ming Kuo


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
256 KB
Volume
38
Category
Article
ISSN
0038-1101

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Comparison of BCP error with current and charge density distribution errors in the benchmark geometry has been carried out using the benchmark solutions and error metric for surface currents [8]. A correlation of BCP error with near-field electromagnetic characterization of the problem has been show