The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors

✍ Scribed by Tian, Yuan ;Zhang, Baolin ;Zhou, Tianming ;Jiang, Hong ;Jin, Yixin

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 393 KB
• Volume: 174
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199908)174:2<413::aid-pssa413>3.0.co;2-z

✦ Synopsis

In this paper, the performance is analyzed for the P 1 ±p 2 ±n and N 1 ±n 2 ±p hetero-and homojunction GaSb/Ga 0.8 In 0.2 As 0.19 Sb 0.81 photodetectors operated at 300 K, based on the incident wavelength and the parameters of GaSb and Ga 0.8 In 0.2 As 0.19 Sb 0.81 . The analyzed results show that the detectivity is much higher with the light incident first through the p-type than first through the ntype Ga 0.8 In 0.2 As 0.19 Sb 0.81 for both structures. In addition, the carrier concentration of GaSb should be as low as possible to reduce the tunneling noise through the P 1 ±p 2 and N 1 ±n 2 heterojunctions. With the same condition for the two structures, the N 1 ±n 2 ±p structure is more advantage than the P 1 ±p 2 ±n structure because the high P 1 ±p 2 heterojunction recombination velocity increases the Auger and radiative noise mechanisms, which limit the performance of photodetectors.