Time-resolved photoluminescence (PL), steady-state PL, and electroluminescence (EL) techniques have been used to characterize the carrier relaxation processes and carrier escape mechanisms in self-assembled InAs/GaAs quantum dot (SAQD) p-i-n structures under reverse bias. The measurements were perfo
โฆ LIBER โฆ
Effect of an external electric field on the breakdown of p-n, p-n-p and p-n-p-n structures
โ Scribed by R.S. Nakhmanson
- Publisher
- Elsevier Science
- Year
- 1965
- Tongue
- English
- Weight
- 138 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0038-1098
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