The aim of this experiment is to grow a thin silicon layer (<50ยตm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 ยตm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications
โ Scribed by M. Baldini; C. Ghezzi; A. Parisini; L. Tarricone; S. Vantaggio; E. Gombia; A. Motta; A. Gasparotto
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 189 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0232-1300
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โฆ Synopsis
Abstract
Structures composed of a p^++^(Zn)GaAs layer deposited by MOVPE on a n(Te)โdoped GaSb substrate were fabricated, with the purpose of obtaining GaSb pโn homoโjunctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and postโgrowth annealing parameters were investigated. The junctions were characterized from the electrical point of view by IโV measurements, while Zn diffusion profiles were studied by SIMS analysis. The effective achievement of a GaSb buried junction, whose profile is characterized by a limited Zn diffusion into the substrate, was evidenced. Efficiency measurements by a solar simulator on 5x5 mm^2^ samples were also performed in order to investigate the photovoltaic properties of the structure. (ยฉ 2011 WILEYโVCH Verlag GmbH & Co. KGaA, Weinheim)
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