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The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon

✍ Scribed by Sheng S. Li

Book ID
107856385
Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
922 KB
Volume
21
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

On the Temperature Dependence of Hole Mo
On the Temperature Dependence of Hole Mobility in Silicon
✍ M. Asche; J. Von Borzeskowski πŸ“‚ Article πŸ“… 1970 πŸ› John Wiley and Sons 🌐 English βš– 286 KB

## Abstract The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i