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On the Temperature Dependence of Hole Mobility in Silicon

โœ Scribed by M. Asche; J. Von Borzeskowski

Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
286 KB
Volume
37
Category
Article
ISSN
0370-1972

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โœฆ Synopsis

Abstract

The influence of the nonโ€parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the nonโ€parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken into account.

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