The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon : Sheng S. Li. Solid-St. Electron. 21, 1109 (1978)

• Publisher: Elsevier Science
• Year: 1979
• Tongue: English
• Weight: 130 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(79)90276-2