The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon: Sheng S. Li and W. Robert Thurber. Solid-St. Electron.20, 609 (1977)

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 131 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(78)91290-8