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The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

✍ Scribed by Sheng S. Li; W.Robert Thurder

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 639 KB
Volume: 20
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(77)90100-9

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