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An Improved Model for Analyzing Hole Mobility and Resistivity in p-Type Silicon Doped with Boron, Gallium, and Indium

✍ Scribed by Linares, L. C.


Book ID
126507327
Publisher
The Electrochemical Society
Year
1981
Tongue
English
Weight
964 KB
Volume
128
Category
Article
ISSN
0013-4651

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