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Temperature dependence of the hole mobility in doped p-GaP

✍ Scribed by Somogyi, K.

Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
542 KB
Volume
37
Category
Article
ISSN
0031-8965

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πŸ“œ SIMILAR VOLUMES

On the Temperature Dependence of Hole Mo
On the Temperature Dependence of Hole Mobility in Silicon
✍ M. Asche; J. Von Borzeskowski πŸ“‚ Article πŸ“… 1970 πŸ› John Wiley and Sons 🌐 English βš– 286 KB

## Abstract The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i