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Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors

โœ Scribed by S. Noor Mohammad; Andrew V. Bemis; Ronald L. Carter; Robert B. Renbeck

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
714 KB
Volume
36
Category
Article
ISSN
0038-1101

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Mobilities of electrons and holes in nap
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โœ L.B. Schein; W. Warta; A.R. McGhie; N. Karl ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 254 KB

Charge carrier mobilities are presented over a wide temperature range (77-300 K) for electrons and holes in naphthalene .md perdeuterated naphthalene for the a. b, and c' crystallographic directions. Consideration is given to the implications of the observed deuteration effects on the validity of ba