Mobilities of electrons and holes in naphthalene and perdeuterated naphthalene
โ Scribed by L.B. Schein; W. Warta; A.R. McGhie; N. Karl
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 254 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0009-2614
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โฆ Synopsis
Charge carrier mobilities are presented over a wide temperature range (77-300 K) for electrons and holes in naphthalene .md perdeuterated naphthalene for the a. b, and c' crystallographic directions. Consideration is given to the implications of the observed deuteration effects on the validity of band and hopping models in these materials.
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The determination of electron transfer equilibria A-+ B = A + B-in the gas phase, with a pulsed-electron highpressure mass spectrometer, leads to AGIO, AH,', and ASlo values. These can be converted into the free energy, enthalpy and entropy changes, AGC(B), AH,O(B) and AS,O(B), for the reaction e +
HI& preclslon measurements of the effect of deuteratlon on the electron moblbty UI the a duectlon of naphthalene over a wrde temperature range (78-300 K) are presented. If IS shown that the mobihty can be described by a Rmperature dependence of TT with II = l\_S over ths wide temperature range and t
Using two frequency-doubled, mtrogen laser pumped, dye-lasers we hJvvc measured the decay of the photon-echo in the lowest r&u -'Alg singlet state of naphthalene in durene and m perdeurero-naphthalene. Optical phase relaxation in the durene m&ed crystal is believed to be caused by resonant phonon s
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