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The compatibility of aluminium layers on plasma-deposited W and WSi 2 films

✍ Scribed by Fang, Y.K.; Yang, H.M.

Book ID
114535502
Publisher
IEEE
Year
1988
Tongue
English
Weight
290 KB
Volume
35
Category
Article
ISSN
0018-9383

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## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained