Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those meas
β¦ LIBER β¦
The bending of silicon wafers by thin polycrystalline silicon film deposition and by film doping using boron diffusion
β Scribed by L.T. Toncheva; I.S. Vassilev
- Book ID
- 107862575
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 649 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0040-6090
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