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Growth behavior of polycrystalline silicon thin films deposited by RTCVD on quartz substrates

โœ Scribed by Bin Ai; Chao Liu; XueQin Liang; Hui Shen

Publisher
Springer
Year
2010
Tongue
English
Weight
1010 KB
Volume
55
Category
Article
ISSN
1001-6538

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Post-growth annealing of zinc oxide thin
Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates
โœ M. Rusop; K. Uma; T. Soga; T. Jimbo ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 260 KB

Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at