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The atomic site of as implanted in Si at ultra-low energies

✍ Scribed by F. d’Acapito; C. Maurizio; M. Malvestuto

Book ID
103843151
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
111 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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✍ C.W. Magee; R.S. Hockett; T.H. Büyüklimanli; I. Abdelrehim; J.W. Marino 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 235 KB

Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxid