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Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

โœ Scribed by V Privitera; E Napolitani; F Priolo; S Moffatt; A La Magna; G Mannino; A Carnera; A Picariello


Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
368 KB
Volume
2
Category
Article
ISSN
1369-8001

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๐Ÿ“œ SIMILAR VOLUMES


Activation annealing of ultra-low-energy
โœ E Schroer; V Privitera; F Priolo; E Napolitani; A Carnera ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 233 KB

We present our investigations on the clustering, diffusion and electrical activation of ultra-low-energy ( 51 keV) implanted boron in crystalline silicon during annealing in the temperature range between 900 and 12008C. We show that during the initial stage of the annealing, boron is bound to non-di