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Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si

✍ Scribed by J.A van den Berg; S Zhang; S Whelan; D.G Armour; R.D Goldberg; P Bailey; T.C.Q Noakes


Book ID
114164613
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
715 KB
Volume
183
Category
Article
ISSN
0168-583X

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SIMS analyses of ultra-low-energy B ion
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Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxid