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Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

✍ Scribed by V.B. Shmagin; A.V. Lyutov; D.Yu. Remizov; K.E. Kudryavtsev; M.V. Stepikhova; Z.F. Krasilnik


Book ID
108215496
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
429 KB
Volume
146
Category
Article
ISSN
0921-5107

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Effect of the breakdown nature on Er-rel
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The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 β†’ 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole