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Effect of the annealing temperature on erbium ion electroluminescence in Si:(Er,O) diodes with (111) substrate orientation

✍ Scribed by N. A. Sobolev; A. M. Emel’yanov; Yu. A. Nikolaev

Book ID: 110128308
Publisher: Springer
Year: 2001
Tongue: English
Weight: 61 KB
Volume: 35
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1410659

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