Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique
✍ Scribed by V.B Shmagin; V.P Kuznetsov; D.Yu Remizov; Z.F Krasil’nik; L.V Krasil’nikova; D.I Kryzhkov
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 130 KB
- Volume
- 105
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation molecular beam epitaxy (SMBE) method. It is shown that the avalanche LEDs are characterized by a greater Er 3+ EL intensity and excitation efficiency compared with the tunnel LEDs. At the same time, an excessive advance into the avalanche breakdown parameter region leads to microplasma breakdown of the p-n junction, which causes a non-uniform distribution of the drive current density over p-n junction area and an appreciable decrease of the Er 3+ EL intensity. Si:Er LEDs operating in mixed breakdown conditions seem to be more preferable for reaching maximal Er 3+ EL intensity at room temperature, as they provide an optimum combination of high Er 3+ EL excitation efficiency with the uniformity of the p-n junction breakdown.