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Effect of current on the electroluminescence of defects produced by high-temperature post-implantation annealing of Si: (Er,O) structures in a chlorine-containing environment

✍ Scribed by A. M. Emel’yanov; E. I. Shek


Book ID
110140147
Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
66 KB
Volume
46
Category
Article
ISSN
1063-7834

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