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Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures

✍ Scribed by A.N. Yablonskiy; M.A.J. Klik; B.A. Andreev; V.P. Kuznetsov; Z.F. Krasilnik; T. Gregorkiewicz

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
279 KB
Volume
27
Category
Article
ISSN
0925-3467

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The photoluminescence (PL) excitation spectrum (intensity of PL as a function of the wavelength of the exciting light) has been measured over the range 1.0 -1.25 eV for PL at 0.79 eV using a free electron laser (FEL) as the excitation source. At all wavelengths, the PL intensity varies with incident