Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE-grown Si:Er/Si diode structures

Effect of the breakdown nature on Er-rel

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

✍ V.B Shmagin; V.P Kuznetsov; D.Yu Remizov; Z.F Krasil’nik; L.V Krasil’nikova; D.I 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 130 KB

The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole