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Effect of thep-njunction breakdown mechanism on the Er3+ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

✍ Scribed by V. B. Shmagin; D. Yu. Remizov; Z. F. Krasil’nik; V. P. Kuznetsov; V. N. Shabanov; L. V. Krasil’nikova; D. I. Kryzhkov; M. N. Drozdov

Book ID: 110137610
Publisher: SP MAIK Nauka/Interperiodica
Year: 2004
Tongue: English
Weight: 141 KB
Volume: 46
Category: Article
ISSN: 1063-7834
DOI: 10.1134/1.1641934

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Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

✍ V.B Shmagin; V.P Kuznetsov; D.Yu Remizov; Z.F Krasil’nik; L.V Krasil’nikova; D.I 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 130 KB

The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole