Temperature-dependent excitonic absorption in long-period multiple InxGa1 −xAs/GaAs quantum well structures
✍ Scribed by S. A. Vaganov; R. P. Seisyan
- Book ID
- 111444848
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 264 KB
- Volume
- 45
- Category
- Article
- ISSN
- 1063-7826
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In this paper we investigated nonlinear properties and lasing in In x Ga 1-x As/GaAs multiple quantum wells grown by metal-organic chemical vapour deposition. A systematic study, performed by high excitation photoluminescence measurements as a function of excitation intensity, allowed us to identify
The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier hei