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Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates

✍ Scribed by Li Chen; K.C. Rajkumar; A. Madhukar; Wei Chen; S. Guha; K. Kaviani

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
393 KB
Volume
111
Category
Article
ISSN
0022-0248

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In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol