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Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells

✍ Scribed by S. Bürkner; M. Maier; E. C. Larkins; W. Rothemund; E. P. O’reilly; J. D. Ralston

No coin nor oath required. For personal study only.

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