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The dependence of the exciton transition and the Fermi energy on the InyGa1−yAs well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

✍ Scribed by T. W. Kim; M. Jung; D. U. Lee; H. J. Kim; Y. S. You; J. W. Cho; K. H. Yoo; J. Y. Lee; M. D. Kim

Book ID
110240387
Publisher
Springer
Year
2000
Tongue
English
Weight
261 KB
Volume
19
Category
Article
ISSN
0261-8028

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In the presence of a strong magnetic field (B) applied perpendicular to the interface of a two-dimensional electron system (2DES), the density of states for a 2D electron gas differs sharply from that at zero-magnetic field, which results in the total number of electrons in the structure differing f