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The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric single quantum wells

✍ Scribed by M Jung; T.W Kim; D.U Lee; D.C Choo; K.H Yoo; D.L Kim; M.D Kim; H Lim

Book ID: 108417411
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 234 KB
Volume: 177
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(01)00122-2

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