The Dependence of the Electron Carrier Occupation in the Subband on the As Mole Fraction in Modulation-Doped InAsxP1—x/InP Strained Single Quantum Wells

✍ Scribed by Kim, T. W. ;Jung, M. ;Lee, D. U. ;Kim, J. H. ;Yoo, K. H.

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 215 KB
• Volume: 168
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199807)168:1<143::aid-pssa143>3.0.co;2-0