Effect of surface encapsulation and As4overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures

✍ Scribed by L. J. Guido; W. E. Plano; D. W. Nam; N. Holonyak; J. E. Baker; R. D. Burnham; P. Gavrilovic

• Book ID: 112812348
• Publisher: Springer US
• Year: 1988
• Tongue: English
• Weight: 425 KB
• Volume: 17
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02652233