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Electron mobility in selectively doped GaAs/InxGa1−xAs multiple quantum well structures

✍ Scribed by V. A. Kulbachinskii; V. G. Kytin; T. S. Babushkina; I. G. Malkina; B. N. Zvonkov; A. Visser

Publisher
Springer US
Year
1996
Tongue
English
Weight
491 KB
Volume
102
Category
Article
ISSN
0022-2291

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✍ L. Calcagnile; A. Passaseo; R. Cingolani 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 44 KB

In this paper we investigated nonlinear properties and lasing in In x Ga 1-x As/GaAs multiple quantum wells grown by metal-organic chemical vapour deposition. A systematic study, performed by high excitation photoluminescence measurements as a function of excitation intensity, allowed us to identify