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Temperature dependence of refractive indices for 4H- and 6H-SiC

✍ Scribed by Xu, Chunhua; Wang, Shunchong; Wang, Gang; Liang, Jingkui; Wang, Shanpeng; Bai, Lei; Yang, Junwei; Chen, Xiaolong


Book ID
121791875
Publisher
American Institute of Physics
Year
2014
Tongue
English
Weight
772 KB
Volume
115
Category
Article
ISSN
0021-8979

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Temperature dependent IBIC study of 4H–S
✍ E. Vittone; V. Rigato; P. Olivero; F. Nava; C. Manfredotti; A. LoGiudice; Y. Gar πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 395 KB

Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for