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Thermal oxidation temperature dependence of 4H-SiC MOS interface

✍ Scribed by Hirofumi Kurimoto; Kaoru Shibata; Chiharu Kimura; Hidemitsu Aoki; Takashi Sugino

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 546 KB
Volume: 253
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2006.04.054

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