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Temperature dependent IBIC study of 4H–SiC Schottky diodes

✍ Scribed by E. Vittone; V. Rigato; P. Olivero; F. Nava; C. Manfredotti; A. LoGiudice; Y. Garino; F. Fizzotti

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
395 KB
Volume
231
Category
Article
ISSN
0168-583X

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✦ Synopsis

Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for each fixed temperature. The CCE versus V curves were analyzed in terms of the Schockley-Ramo-Gunn theory and the minority carrier (hole) diffusion length was obtained as a function of temperature.

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Study of charge collection efficiency in 4H–SiC Schottky diodes with 12C ions
✍ M. De Napoli; F. Giacoppo; G. Raciti; E. Rapisarda 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 363 KB

The Charge Collection Efficiency (CCE) in 4H-SiC epitaxial Schottky diodes is studied as a function of the applied reverse bias. Three SiC types, with different doping concentrations, were used to detect 12 C ions at 14.2, 28.1 and 37.6 MeV. In two SiC types we observe minority charge carriers, gene