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Light ions response of 4H-SiC Schottky diodes with different dopant concentration

✍ Scribed by M. De Napoli; F. Giacoppo; G. Raciti; E. Rapisarda; C. Sfienti

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 441 KB
Volume: 197
Category: Article
ISSN: 0920-5632
DOI: 10.1016/j.nuclphysbps.2009.10.066

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The Charge Collection Efficiency (CCE) in 4H-SiC epitaxial Schottky diodes is studied as a function of the applied reverse bias. Three SiC types, with different doping concentrations, were used to detect 12 C ions at 14.2, 28.1 and 37.6 MeV. In two SiC types we observe minority charge carriers, gene